Silan SiC MOSFET Distributor | 1200 V Silicon Carbide

BeiLuo supplies genuine Silan silicon carbide (SiC) MOSFETs, built on Silan's own SiC trench process and aimed at high-efficiency, high-frequency power conversion. SiC switches faster than silicon with far lower switching loss, so a converter can run at a higher frequency with smaller magnetics and a smaller cooling system, which raises power density in photovoltaic inverters, electric-vehicle charging, on-board chargers and industrial power supplies. Silan offers 1200 V SiC MOSFETs spanning roughly 13.5 to 62 milliohm on-resistance in TO-247 four-lead and HSOP packages, with current ratings from about 30 A to 138 A and gate-charge figures published for each part. A four-lead Kelvin-source package removes source inductance from the gate loop, which matters because SiC switches fast enough that a loose gate loop causes ringing and overshoot. Because SiC has no tail current, the turn-off transition is clean and the device can switch at tens of kilohertz without the switching-loss penalty a silicon IGBT would incur. Every device BeiLuo ships is factory-traceable and includes an import declaration, a certificate of origin and a RoHS compliance file. Our FAE team helps you compare on-resistance, gate charge and switching energy, choose a package with acceptable loop inductance, and design the gate drive and thermal path. Selecting a SiC MOSFET means matching Vdss, Id and the hot on-resistance value to your voltage, current and thermal budget, then confirming the package and gate drive for clean switching.