SCDP120R040NP4B
1200 V / 66 A Silan SiC MOSFET, 40 mOhm, four-lead TO-247B-4L for cost-effective high-frequency solar and charger stages.
The SCDP120R040NP4B is a 1200 V / 66 A Silan silicon carbide N-channel MOSFET in the four-lead TO-247B-4L package, with a typical on-resistance of 40 milliohm at a 15 V gate drive and a gate charge of 101 nC. It brings silicon carbide's fast, low-loss switching to cost-sensitive designs, trading some on-resistance for a lower price while keeping the wide-bandgap benefits of clean switching and high-temperature operation. The four-lead Kelvin-source package removes source inductance from the gate loop, so the device switches cleanly despite its speed, and the 66 A rating covers medium-power photovoltaic inverters, charger stages and industrial power supplies. Because SiC has no tail current, the turn-off is fast and the device can run at high frequency with small magnetics. Every device is factory-traceable and ships with import declaration, certificate of origin and RoHS documentation. Designers should confirm the gate drive, the loop inductance and the hot on-resistance for the thermal design. BeiLuo holds this class in stock and our FAE team supports gate drive, layout and thermal validation.
FAE Professional Review
The SCDP120R040NP4B is the value option in Silan's 1200 V SiC line: a lower on-resistance than any comparable silicon switch, at a price that makes SiC practical beyond premium designs. It suits medium-power solar and charger stages where efficiency still matters but cost is tight.
| Parameter | Value |
|---|---|
| VDSS (V) | 1200 V |
| ID (A) | 66 A |
| RDS(on) typ (mOhm) | 40 |
| Package | TO-247B-4L |
| Qg (nC) | 101 |
Application Circuits
Medium-power solar inverters
Reference circuits and application schematics for Medium-power solar inverters are available from our FAE team.
Charger power stages
Reference circuits and application schematics for Charger power stages are available from our FAE team.
Industrial power supplies
Reference circuits and application schematics for Industrial power supplies are available from our FAE team.
Need a reference schematic or design review? Our FAE engineers can share verified circuits and layout guidance for this part.
Related Documents
Alternative Part Numbers
| Model | Package | Note | Action |
|---|---|---|---|
| SCDP120R013N2P4B | TO-247B-4L | Lower on-resistance option for higher efficiency | View |
Complementary Part Numbers
| Model | Package | Note | Action |
|---|---|---|---|
| SGM300HF12A3TFD | A3 | IGBT module for the main inverter bridge | View |
| SGTP40V120FDB2P7 | TO-247 | 1200 V IGBT for a boost or PFC stage | View |
Recommended Complementary Products
Frequently Asked Questions
When should I choose this SiC MOSFET?
Choose it when you want the efficiency and high-frequency benefits of silicon carbide at a lower cost than the premium low-on-resistance parts, such as a medium-power solar inverter or a charger power stage. The 66 A rating suits these classes with margin.
For maximum efficiency, step up to the SCDP120R013N2P4B.
Can I use a standard gate driver?
SiC needs a gate drive tailored to its threshold and switching speed, and a short, low-inductance gate loop. The four-lead package helps, but you should still choose the gate resistance for your EMI target and possibly use a negative off-state supply.
Our FAE team can review your gate-drive design.
Is the part genuine and documented?
BeiLuo supplies factory-traceable SCDP120R040NP4B devices through Silan's authorized channel, with import declaration, certificate of origin and RoHS files on every order. The class is normally held in stock.
Request a sample for your own efficiency testing.