SCDP120R013N2P4B

The SCDP120R013N2P4B is a 1200 V / 138 A Silan silicon carbide N-channel MOSFET in the four-lead TO-247B-4L package, with a typical on-resistance of 13.5 milliohm at a 15 V gate drive and a gate charge of 224 nC. Silicon carbide switches faster and with far lower switching loss than silicon, so a converter can run at a higher frequency with smaller magnetics and a smaller cooling system, which raises power density in photovoltaic inverters, electric-vehicle charging, on-board chargers and industrial power supplies. The four-lead Kelvin-source package removes source inductance from the gate loop, which matters because SiC switches fast enough that a loose gate loop causes ringing and overshoot. Because SiC has no tail current, the turn-off transition is clean and the device can switch at tens of kilohertz without the switching-loss penalty a silicon IGBT would incur. Every device is factory-traceable and ships with import declaration, certificate of origin and RoHS documentation. Designers should confirm gate drive, loop inductance and the hot on-resistance for the thermal design. BeiLuo holds this class in stock and our FAE team supports gate drive, layout and thermal validation.